The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 1994
Filed:
Feb. 18, 1992
Alain Nouailhat, Meylan, FR;
Daniel Bois, Saint Ismier, FR;
Abstract
A bipolar transistor comprising a semiconductor substrate, of a first conductivity type, a retrograde well serving as the collector and having a second conductivity type opposite to the first, a base active region having a first conductivity type, a region serving as an emitter of the second conductivity type, the regions being bordered on either side by insulating regions. According to the invention, the transistor includes at least one second conductivity type zone serving as the collector contact, located in a region of the retrograde well at a distance from the base zone and extending away from said base zone no further than level with the insulating zone. The invention is applicable to making BI-MOS or BI-CMOS circuits.