The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 1994
Filed:
Mar. 27, 1992
Kozo Nishimura, Kobe, JP;
Kabushiki Kaisha Kobe Seiko Sho, Kobe, JP;
Abstract
Disclosed herein is a diamond Schottky gate type field effect transistor (FET) comprising: an insulating diamond under layer; a doped semiconducting diamond layer as an active layer, which has electrode areas formed by ion implantation such that the interface level is formed near the surface thereof; an insulating diamond layer formed on a portion of the semiconducting diamond layer; a source electrode made of a degenerate diamond film provided in one of the electrode areas of the semiconducting diamond layer, to form an ohmic contact between the same and the semiconducting diamond layer; a drain electrode made of a degenerate diamond film provided in the other of the electrode areas of the semiconducting diamond layer, to form an ohmic contact between the same and the semiconducting diamond layer; and a gate electrode made of a degenerate diamond film formed on the insulating diamond layer, to form a Schottky junction between the same and the semiconducting diamond layer through the diamond insulating layer.