The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 1994
Filed:
May. 21, 1993
Applicant:
Inventor:
Kazunori Asano, Tokyo, JP;
Assignee:
NEC Corporation, , JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 40 ; 437133 ; 437184 ; 437912 ; 148D / ; 148D / ; 148D / ;
Abstract
In a method for fabricating a FET of the present invention, first and second side walls are formed on a side surface of a gate electrode, and two n-GaAs layers are formed on an active layer by selective growth using the side walls as a mask. After that, the side walls are removed, whereby double recesses are formed around the gate electrode.