The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 1994
Filed:
Feb. 05, 1993
Richard D Veltri, East Hartford, CT (US);
United Technologies Corporation, Hartford, CT (US);
Abstract
CVD Si.sub.3 N.sub.4 can be made by placing a substrate (2) inside a CVD reactor (4) having an interior and interior walls (6). The interior walls of the reactor are include a high temperature metal selected from the group consisting of Mo, Nb, Rh, Hf, Ta, W, Re, and Ir. An inert gas is flowed through the reactor (4) and the pressure inside the reactor is reduced to less than about 40 kPa. The substrate (2) and interior of the reactor (4) are heated to a temperature between about 1200.degree. C. and about 1700.degree. C. A reactant gas mixture of a silicon halide and an excess of a nitrogen-containing compound is flowed into the reactor such that the silicon halide reacts with the nitrogen-containing compound to form Si.sub.3 N.sub.4. The high temperature metal on the interior walls (6) of the reactor (4) inhibits the formation of Si.sub.3 N.sub.4 on the interior walls of the reactor so the majority of the Si.sub.3 N.sub.4 forms on the substrate (2).