The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 1994

Filed:

May. 05, 1993
Applicant:
Inventors:

Shinichi Kawai, Tokyo, JP;

Tetsuo Izawa, Yokohama, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257260 ; 257270 ; 257347 ; 257507 ; 357 2314 ; 357 59 ; 437 40 ; 437235 ; 437911 ; 437913 ;
Abstract

A high speed and highly functional MOSFET having a thin channel formed in a single crystalline layer is controlled by voltages applied to both an upper gate electrode and a buried gate layer that sandwich the channel therebetween.


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