The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 1994
Filed:
Jun. 10, 1992
Mahalingam Nandakumar, Raleigh, NC (US);
Bantval J Baliga, Raleigh, NC (US);
North Carolina State University at Raleigh, Raleigh, NC (US);
Abstract
An integrated multicelled thyristor includes a plurality of main thyristor cells and a plurality of edge thyristor cells. The main thyristor cells comprise source cells located in the center or innermost portion of an integrated thyristor and the edge cells are located at the periphery. In order to insure that all thyristor cells turn off uniformly, current exporting means is provided from the source cells to the edge cells to reduce current hole crowding in the peripheral cells. The anodes of all cells are electrically connected and the cathodes of all main cells are electrically connected. However, the cathodes of the edge cells are electrically connected to one or more source cells by the current exporting means. The unit cell of the multicelled device preferably comprises a BRT, but can comprise other well known thyristor structures where turn-off is limited by hole-current crowding.