The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 1994
Filed:
Jul. 07, 1992
Takeshi Nobe, Hirakata, JP;
Sigeo Akiyama, Neyagawa, JP;
Matsushita Electric Works, Ltd., Kadoma, JP;
Abstract
A low output capacitance, double-diffused field effect transistor effectively realizes the reduction in the output capacitance, by providing a drain electrode on one surface of a first conduction type semiconductor substrate, forming on the other surface of the substrate, through a double diffusion, second conduction type well regions and first conduction type source regions for connection therewith of a source electrode, forming channel regions in surface zone of the well regions disposed between first conduction type zone of the semiconductor substrate and the source regions, above which channel regions being provided gate electrodes through an insulating film, forming a guard ring region surrounding the well regions, and connecting at least one capacitance component means to the gate electrodes.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile