The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 1994
Filed:
Jan. 26, 1993
Applicant:
Inventors:
Hanan Potash, La Jolla, CA (US);
Melvyn E Genter, San Diego, CA (US);
Bruce B Roesner, San Diego, CA (US);
Assignee:
Unisys Corporation, Blue Bell, PA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 50 ;
Abstract
A memory cell includes a pair of spaced apart conductors on an insulating layer, and a novel electrically alterable resistive component between the conductors. This resistive component consists essentially of a single element semiconductor selected from the group of Si, Ge, C, and .alpha.-Sn, having a crystalline grain size which is smaller than polycrystalline. Dopant atoms in the semiconductor are limited to be less than 10.sup.17 atoms/CM.sup.3 ; and, such a doping range includes zero doping. All dopant atoms are interstitial in the semiconductor crystals and not substitutional.