The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 1994
Filed:
Jul. 20, 1992
Yoshihiko Hirai, Osaka, JP;
Juro Yasui, Osaka, JP;
Yasuaki Terui, Osaka, JP;
Kiyoshi Morimoto, Osaka, JP;
Atsuo Wada, Osaka, JP;
Kenji Okada, Osaka, JP;
Shin Hashimoto, Osaka, JP;
Shinji Odanaka, Osaka, JP;
Masaaki Niwa, Osaka, JP;
Kaoru Inoue, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A quantum wire is formed at the top of triangular protrusion of silicon substrate. A quantum wire is isolated from the substrate by silicon oxide layers. A quantum wire is isolated from the substrate by impurity layers of a conduction type different from that of the substrate. An insulator film and a gate electrode are formed at the edge of triangular protrusion of a silicon substrate, and a quantum wire is induced by applying a voltage to the gate electrode. A quantum wire structure is fabricated by forming saw-tooth-like protrusions having (111) side planes by performing anisotropic crystalline etching and by oxidizing the silicon substrate with use of the oxide protection film to remain only around the top of the protrusions unoxidized. In another method, an oxide film is formed except around the top of the protrusions whereby a quantum wire is formed at the unoxidized region. In a different method, impurity layers are formed except around the top of the protrusions by ion implantation.