The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 1994
Filed:
Dec. 11, 1992
Cheol-Soo Park, Kyoungki, KR;
Yo-Hwan Koh, Seoul, KR;
Jae-Beom Park, Seoul, KR;
Young-Jin Park, Kyoungki, KR;
Jin-Seong Oh, Seoul, KR;
Hyundai Electronics Industries Co., Ltd., Kyoungki, KR;
Abstract
When contacting a bit line and a charge storage electrode to a source/drain of the MOS transistor during a manufacturing process of a highly integrated semiconductor device, a contact pad is formed by filling up polysilicon into a contact hole that had been made using a self-align method in order not to damage the word line or the bit line as a result of a small processing margin during a contact hole forming process. Also, the occurrence of a topological difference during a semiconductor manufacturing process is minimized by forming an oxide layer such as SOG, BPSG, TEOS, and PECVD oxide over the top of the field oxide for a flattening effect.