The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 1994
Filed:
Feb. 14, 1992
Applicant:
Inventors:
John L Gland, Pinckney, MI (US);
Johannes W Schwank, Ann Arbor, MI (US);
Kensall D Wise, Ann Arbor, MI (US);
Assignee:
The Regents of the University of Michigan, Ann Arbor, MI (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
427-8 ; 4272481 ; 427252 ; 427255 ;
Abstract
A method for selectively forming thin films by CVD in which at least two substrates are exposed to a decomposable gas, and one of the subsrates is independently heated to selectively form a film on the heated substrate. The invention further comprises a step of measuring an electrical property of the film during deposition.
Gland, John. (1994). In-situ monitoring, and growth of thin films by means of selected area (U.S. Patent No. 5296255). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5296255
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile