The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 1994
Filed:
Oct. 30, 1991
Yutaka Nabeshima, Katano, JP;
Tokuhiko Tamaki, Sakai, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A dry etching method for dry etching a silicon oxide film or a multilayer oxide film thereof which enables formation of contact window to good dimensional precision and with stable etching configuration in the process of film etching at submicron level. A compound gas containing a C element or S element or Cl element, and F element (e.g., CF.sub.4) is used as a principal gas, and a compound gas containing a C element and two or more of H elements (e.g., CH.sub.2 F.sub.2) as an additive gas is used, in the process of dry etching silicon oxide film or a multilayer film thereof. By using principal and additive gases having good step coverage of deposit produced by plasma reaction, it is possible to eliminate any etching residue and form contact windows having stable etching configuration and good dimensional accuracy in the process of film etching at submicron level. By using a compound gas containing a greater number of H element atoms than C element atoms, the deposit on the etching side wall can be a soluble one having a low F element content, such as (C.sub.x H.sub.y)n polymer, and can be readily removed through after-etching washing.