The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 1994
Filed:
Jun. 09, 1992
Kalyankumar Das, Raleigh, NC (US);
Kobe Steel USA, Research Triangle Park, NC (US);
Abstract
A vertical diamond field effect transistor includes a nondiamond substrate, preferably a heavily doped silicon substrate, having a diamond layer on one face thereof, a source contact on the diamond layer, a gate contact on the diamond layer adjacent the source contact, and a drain contact on the back face of the substrate. The diamond layer is preferably a single layer of large polycrystalline diamond grains, having a heavily doped region adjacent the silicon substrate. The gate and source contacts may extend across many polycrystalline diamond grains in the single layer of polycrystalline diamond grains. Alternatively, the source and gate contacts may be narrower than the average grain size of the polycrystalline diamond grains. Interdigitated source and gate fingers, narrower than the average polycrystalline diamond grain size, may also be provided. The single layer of polycrystalline grains may be formed on the silicon substrate. High performance vertical diamond field effect transistor devices are thereby provided.