The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 1994
Filed:
Mar. 08, 1993
Leonidas Karapiperis, Bourg la Reine, FR;
Didier Pribat, Paris, FR;
Thomson-CSF, Puteaux, FR;
Abstract
The invention pertains to the field of fabrication, by vapor phase deposition, of the thin layers of monocrystalline, polycrystalline or amorphous material on a substrate having an identical or different nature. The aim is to provide a method, enabling this structure to be made, that includes a modulation of both the composition and the doping, in a direction that is not perpendicular to the surface of the substrate, notably in a lateral way to obtain a planar technology. According to the invention, this thin layer is made by conformal epitaxy, using a crystalline seed in gas phase, between two confinement layers made of a distinct material in such a way that there can be neither nucleation nor deposition of semiconductive material on the surfaces of said confinement layers and wherein the variation of the gaseous mixture of said gas phase is controlled to obtain said modulation of the composition and/or of the doping of said thin film.