The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 1994
Filed:
Aug. 25, 1993
Takaho Tanigawa, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
An impurity doped region is formed in a semiconductor substrate, and an insulating layer is formed thereon. A conductive layer is formed and is patterned by a photolithography process Then, a conductive sidewall is formed inside of the conductive layer. The insulating layer is etched with a mask of the conductive sidewall and the conductive layer to create a contact hole leading to the impurity doped region. A capacitor lower electrode layer is deposited within the contact hole. Thus, a capacitor insulating layer and a capacitor upper electrode layer are formed, to obtain a stacked capacitor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile