The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 1994
Filed:
Aug. 27, 1990
Eiji Yamashita, Tokyo, JP;
Terumi Muguruma, Tokyo, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A plasma ashing method to prevent a generation of a resist-residue buildup is disclosed that includes a step for installation of a substrate on which a photoresist material is formed in a chamber, a step for drawing a vacuum in the chamber and keeping the chamber at a predetermined pressure, a step for filling oxygen gas in the camber and keeping the chamber at approximately 1 Torr, and a step for applying a high-frequency electric power of 0.10 [W/cm.sup.2 ] or less to the oxygen gas. A more effective range of the high-frequency electric power per area of the internal wall of the chamber is from 0.008 to 0.10 [W/cm.sup.2 ]. The most effective value of the high-frequency electric power is 0.055 [W/cm.sup.2 ].
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile