The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 1994
Filed:
Aug. 02, 1991
Leroy L Chang, Goldens Bridge, NY (US);
Leo Esaki, Katonah, NY (US);
Hiro Munekata, Mahopac, NY (US);
Hideo Ohno, Ossining, NY (US);
Stephan vonMolnar, Ossining, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A new semiconductor material or compound and method for its manufacture is disclosed. The material or compound has the Formula III-V or IV which includes as part of the compound, a transition element or a rare earth element present in an amount sufficient to change the material or compound from a paramagnetic state to a locally ordered magnetic state. The material or compound is made by depositing III, and V or IV and a transition element or a rare earth element onto a substrate at conditions such that the transition element or rare earth element that is deposited on the substrate is not in equilibrium with the material or compound. By employing this technique new semiconductor materials or compounds can be made including Ga.sub.1-x Mn.sub.x As and In.sub.1-x Mn.sub.x As where Mn is present in an amount greater than about 5.4.times.10.sup.20 cm.sup.-3.