The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 1994
Filed:
Apr. 08, 1992
Shigeru Shiratake, Itami, JP;
Hirohisa Yamamoto, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
An ion implanter encloses a semiconductor substrate adjacent to a fixing member which retains a semiconductor substrate on a supporting bed. The ion implanter includes a ring electrode for generating secondary electrons in response to incident ions and a cup-like electrode for directing the secondary ions to the semiconductor substrate. The ring electrode is negatively biased with respect to the supporting bed and the cup-like electrode surrounds the outer edge of the semiconductor substrate. The ion implanter increases the quantity of the secondary electrons produced and efficiently directs them to the semiconductor substrate. The semiconductor substrate which is electrically charged by implanting ions is neutralized, preventing dielectric breakdown from occurring in an insulating film.