The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 1994
Filed:
Oct. 29, 1991
Takeaki Ishii, Ooita, JP;
Satoshi Maeda, Ooita, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A semiconductor memory device has a memory cell composed of a select MOS transistor and information storage capacitor and a peripheral circuit composed of a MOS transistor formed at a peripheral side of the memory cell, these transistors being formed in the surface portion of a first conductivity type semiconductor substrate. In the semiconductor memory device, the gate oxide film of the select MOS transistor is different in thickness from the gate oxide film of the MOS transistor of the peripheral circuit, the gate electrodes of these transistors being simultaneously formed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile