The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 1994
Filed:
Sep. 09, 1992
Hitachi, Ltd., Tokyo, JP;
Abstract
In a high speed logic circuit using a vertical hetero-junction bipolar transistor, in which two-dimensional carriers formed at a semiconductor hetero-junction interface are used as a base layer, the uppermost layer being a collector layer, the lowest layer being an emitter layer, two base electrodes making contact with the base layer are disposed so as to put a collector electrode, which is electrically in contact with the collector layer, therebetween. The base electrodes are used at the same time as a source electrode and a drain electrode, respectively, of a field effect transistor using the two-dimensional carriers as an active layer. The high speed logic circuit is so constructed that one of the base electrodes of the bipolar transistor is an input terminal; the other is connected with a power supply; the emitter is grounded; and the collector is an output terminal.