The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 1994
Filed:
Sep. 12, 1991
Bruce A Kauffmann, Jericho, VT (US);
Chung H Lam, Williston, VT (US);
Jerome B Lasky, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A memory cell, suitable for electrically erasable programmable read only memories (EEPROMs), includes direct write cell capability. The memory cell is fabricated on a substrate and uses an inversion source gate disposed above the substrate to generate a depletion source therein. The depletion source defines a channel region in the substrate with an associated drain. An electrically isolated floating gate is disposed above the substrate so as to overlap at least a portion of the substrate channel region. Further, a program gate is disposed to overlap a portion of the floating gate and an access gate is also provided aligned at least partially over the substrate channel region such that a dual gate device is defined. An array of such memory cells can also be constructed.