The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 1994
Filed:
Sep. 11, 1992
Tuong H Hoang, Sunnyvale, CA (US);
Mansour Izadinia, San Jose, CA (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
A circuit utilizable for protecting an integrated circuit feature from electrostatic discharge is disclosed. A first bipolar transistor has its emitter connected to the IC feature and its collector connected to ground. A second bipolar transistor has its emitter connected to the IC feature and its collector connected to its base and to the base of the first bipolar transistor. A field effect transistor has its gate and drain connected to the IC feature and its body connected to its source and to the collector and base of the second bipolar transistor and to the base of the first bipolar transistor. A diode has its cathode connected to the body and the source of the field effect transistor and to the collector and base of the second bipolar transistor and to the base of the first bipolar transistor.