The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 1994
Filed:
Mar. 09, 1992
Yukiyasu Sugano, Kanagawa, JP;
Shinji Minegishi, Kanagawa, JP;
Kazuhide Koyama, Kanagawa, JP;
Hirofumi Sumi, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A metallization method for improving wettability and reactivity of a titanium (Ti) based barrier metal layer with respect to an aluminum (Al) based material and simultaneously achieving high barrier properties and superior step coverage, is proposed. An operation of increasing the crystal grain size of and planarizing at least a surface region of a barrier metal layer is effected simultaneously at the time of formation of a barrier metal layer. In this manner, Al migration characteristics and reactivity on a barrier metal surface are improved so that voids are not produced when an Al-based material layer is charged into small-sized connecting hole by a process sensitive to surface morphology, such as high temperature bias sputtering. By this technique, wettability of a material layer having distinctly inferior wettability with Al, while being excellent in barrier properties, such as a TiON layer, may be improved. As a smoothing operation, bias sputtering, laser irradiation and lamp annealing are proposed. Satisfactory results have been achieved on applying these to a Ti/TiON/Ti system, a Ti/TiON system or to a Ti/TiON/TiSi.sub.2 system.