The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 1994
Filed:
Oct. 19, 1992
Shin-ichi Sato, Nara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A method for fabricating a semiconductor device including a contact window formed in an interlevel insulator so as to connect electrodes to an interconnection and to connect impurity diffusion regions to the interconnection is provided. After forming an insulating film whose thickness on a contact region of at least one of the plurality of electrodes, which is to be electrically connected to the interconnection, is smaller than that on at least another one of the plurality of electrodes, which is not to be electrically connected to the interconnection. The interlevel insulator formed on part of the plurality of impurity diffusion regions is etched until a surface of the semiconductor substrate is exposed, and the interlevel insulator on the contact region of at least one of the plurality of electrodes is etched until a surface of the electrode is exposed.