The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 1994
Filed:
Apr. 09, 1992
Applicant:
Inventor:
Akira Sato, Yamagata, JP;
Assignee:
NEC Corporation, , JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 20 ; 437229 ; 437931 ; 148D / ; 148D / ; 148D / ;
Abstract
According to the present invention, in the ion implantation step in manufacturing a semiconductor device, a resist of a resist pattern formed on a portion of a semiconductor wafer is removed from the outer peripheral portion of the semiconductor wafer, and ion implantation is performed through the resist pattern. Since the resist is removed from the outer peripheral portion, a contact portion between a semiconductor wafer fixing portion of an ion implantation unit and the semiconductor wafer is conductive. Therefore, charges generated by the ion implantation escape from the wafer fixing portion, and the semiconductor wafer is not charged, thereby preventing electrostatic breakdown.