The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 1994
Filed:
Dec. 28, 1992
Nobuyuki Matsumoto, Yamatokoriyama, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A preparation method of a gate electrode for semiconductor device which comprises forming a plurality of specific resist layers sensitive to an electron beam over a substrate through a silicon nitride film, subjecting the resist layers to an electron beam lithography to obtain an opening having a specific configuration at the opening portion, etching the silicon nitride film through the opening to form an opening in the silicon nitride film, etching the substrate through the opening of the silicon nitride film to form a cavity in the substrate, and forming a metal member on the substrate in the cavity in accordance with a metal-deposition and lift-off process to obtain the gate electrode in a projected shape.