The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 1994
Filed:
Jan. 28, 1992
Applicant:
Inventor:
Shuji Nakamura, Anan, JP;
Assignee:
Nichia Kagaku Kogyo K.K., Tokushima, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
156613 ; 156610 ; 156614 ; 437127 ; 437133 ;
Abstract
Crystals of a gallium nitride-based compound semiconductor are grown on the surface of a buffer layer represented by formula Ga.sub.X Al.sub.1-X N (0<.times..ltoreq.1). The crystallinity of the gallium nitride-based compound semiconductor grown on the surface of the buffer layer can be drastically improved.