The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 1994
Filed:
Jun. 05, 1992
James C Lau, Torrance, CA (US);
Kenneth Lui, Fountain Valley, CA (US);
Richard P Malmgren, Rancho Dominguez, CA (US);
TRW Inc., Redondo Beach, CA (US);
Abstract
This invention discloses a method of fabricating a plurality of diamond semiconductor wafers from a single crystal diamond semiconductor boule, where the diamond boule is grown by a chemical vapor deposition (CVD) process. Initially, a single crystal diamond seed is polished and an impurity layer is deposited on the polished seed crystal. The CVD growth process is then initiated to deposit a layer of single crystal diamond over the impurity layer to form the diamond boule. At desirable intervals, the CVD growth process is stopped and a surface of the diamond boule is polished in order to accept another impurity layer. Each impurity layer is photolithographically patterned in order to generate an alternating configuration of impurity regions and hole regions. The impurity regions and the hole regions enable the bond between the diamond layers to be weakened without causing the crystalline orientation to deviate. Once the diamond semiconductor boule is developed by this process, it can be easily sliced by a laser slicing process into a plurality of diamond semiconductor wafers along the impurity layers.