The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 1994
Filed:
Sep. 28, 1992
Applicant:
Inventors:
Kyle W Terrill, Santa Monica, CA (US);
Prahalad K Vasudev, Thousand Oaks, CA (US);
Assignee:
Hughes Aircraft Company, Los Angeles, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257327 ; 257347 ; 257350 ; 257365 ; 257366 ;
Abstract
A submicron MOSFET is fabricated on an ultrathin layer with a generally intrinsic channel having a dopant concentration less than about 10.sup.16 cm.sup.-3. The channel thickness is preferably no greater than about 0.2 microns; the ratio of channel thickness to length is less than about 1:4, and preferably no greater than about 1:2. Punchthrough and other short-channel effects are inhibited by the application of an appropriate back-gate voltage, which may also be varied to adjust the voltage threshold.