The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 1994
Filed:
Apr. 02, 1993
Applicant:
Inventors:
A Nadeem Ishaque, Clifton Park, NY (US);
Robert F Kwasnick, Schenectady, NY (US);
Assignee:
General Electric Company, Schenectady, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J / ;
U.S. Cl.
CPC ...
2502141 ; 2502081 ; 257186 ;
Abstract
An avalanche photodiode (APD) has a two tier passivation layer disposed over the silicon APD body. The passivation layer includes an inorganic moisture barrier layer and an organic dielectric layer. The inorganic material forming this layer is preferably silicon nitride or silicon oxide, and the organic dielectric material is a polyimide or benzocyclobutene.