The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 1994
Filed:
Nov. 25, 1991
Shinichi Satoh, Hyogo, JP;
Hiroji Ozaki, Hyogo, JP;
Hiroshi Kimura, Hyogo, JP;
Wataru Wakamiya, Hyogo, JP;
Yoshinori Tanaka, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device according to the present invention comprises a substrate (4) in a periphery of which formed are elements isolating regions. A bonding pad (3) is formed above the elements isolating region with an isolation layer (7) provided therebetween. An underlying layer (12) having a buffering function is formed on a surface of the bonding pad and the semiconductor substrate. In case the elements isolating region is formed of LOCOS film (30), the underlying layer is formed between the bonding pad and the LOCOS film. In case the elements isolating region is of a field-shield structure (13, 14), the underlying layer (12) is formed by separating a part of a gate electrode layer (14) of the field shield into an island. The underlying layer buffers external force applied on the bonding pad in a bonding processing to prevent generation of cracks in the semiconductor layer.