The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 1994
Filed:
Jan. 25, 1993
Nisshin Steel Co., Ltd., Tokyo, JP;
Abstract
A chamber (10) is divided into a reaction zone (20) and a sublimation zone (30). A gaseous mixture (41) is supplied through a conduit (21) into the reaction zone (20) and heated by a heater (27). The components in the gaseous mixture (41) are reaxcted with each other to synthesize solid-phase SiC (42). The solid-phase SiC (42) is heated and evaporated by a heater (35), and condensed as a single crystal (43) on a seed crystal attached to a mount base (37). The mount base (37) is rotated and lowered in response to the growth of the SiC single crystal (43) by a rotary shaft (38). Since the SiC single crystal (43) grows from SiC synthesized by the vapor-phase reaction, the obtained product is of very high purity without the substantial inclusion of impurities. In addition, a single crystal having a large diameter or length can be obtained without any restrictions originated in a crucible.