The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 1994
Filed:
Aug. 26, 1992
Chihung (John) Hui, Cupertino, CA (US);
Roger Szeto, San Jose, CA (US);
Pioneer Semiconductor Corporation, San Jose, CA (US);
Abstract
The invention provides an improved BiCMOS device and a method of fabricating such a BiCMOS device which requires fewer process steps than known fabrication methods. In one embodiment, the invention provides a method of forming an interpoly capacitor in a BiCMOS device which maintains the thickness of the interpoly dielectric in the capacitor while a window is etched for the emitter in a bipolar transistor. The method includes the use of a thin polysilicon layer overlying the oxide layer, which protects the oxide from etching while the emitter window is etched.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile