The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 1994
Filed:
Feb. 18, 1992
Applicant:
Inventors:
Kazuo Kihara, Yokohama, JP;
Minoru Taguchi, Oomiya, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257215 ; 257370 ; 257372 ; 257373 ; 257378 ; 257400 ; 257552 ; 257557 ; 257565 ;
Abstract
In a semiconductor device, a charge transfer device, a bipolar transistor, and a MOSFET are formed on a single chip, and the peripheral portion of the charge transfer device is surrounded by an N.sup.+ -type region. Since the charge transfer device block is surrounded by the N.sup.+ -type region and the N.sup.+ -type buried layer, leaked charge of clocks from the charge transfer device is absorbed by the N.sup.+ -type region and the N.sup.+ -type buried layer.
Quick Actions:
Kihara, Kazuo. (1994). Semiconductor device having ccd and its peripheral bipolar transistors (U.S. Patent No. 5286986). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5286986
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile