The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 1994
Filed:
Dec. 26, 1991
Yasuhiro Mitani, Habikino, JP;
Katsumara Ikubo, Tenri, JP;
Yasunori Shimada, Nara, JP;
Hirohisa Tanaka, Ikoma, JP;
Hiroshi Morimoto, Kitakatsuragi, JP;
Yutaka Nishi, Osaka, JP;
Tomohiko Yamamoto, Tenri, JP;
Kenichi Nishimura, Tenri, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A method for producing an active matrix substrate using a thin film transistor having a gate electrode on an insulating substrate covered with a gate insulating layer, a semiconductor layer on the gate insulating layer, a channel protective layer on the semiconductor layer, a drain electrode having a portion overlying the gate electrode with the interposition of the gate insulating layer, the semiconductor layer and the channel protective layer, and a source electrode having a portion overlying the gate electrode with the interposition of the gate insulating layer, the method enhancing the transistor characteristics of the active matrix substrate with minimum leakage and the removal of an off-current generated from the presence of electrons and holes.