The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 1994
Filed:
Apr. 06, 1992
Yoshihiro Hisa, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A CEL material (11) is formed such that a first region (11a) thereof which is formed on a concave portion of a semiconductor substrate (1) is sufficiently thicker than a second region (11b) thereof which is formed on the other region. Light (4) is directed from above to the CEL material (11) for a predetermined period of time to render only the thin second region pervious to light to thereby expose part of a photoresist (2) which is under the second region (11b) by the illumination. Subsequently, the semiconductor substrate (1) is immersed in an appropriate solvent to remove only part of the photoresist (2) which is under the first region (11a). The part of the photoresist (2) which is under the second region 11b remains unremoved. The photoresist (2) can be patterned with the shape of the concave portion of the semiconductor substrate (1) accurately reflected therein.