The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 1994
Filed:
Mar. 01, 1993
Avi Y Feldblum, Highland Park, NJ (US);
Keith O Mersereau, Northampton, PA (US);
Casimir R Nijander, Lawrenceville, NJ (US);
Wesley P Townsend, Princeton, NJ (US);
AT&T Bell Laboratories, Murray Hill, NJ (US);
Abstract
During a reactive ion etching process (FIG. 5) for making lens elements (15, FIG. 4) in a silica substrate (12), the gas constituency in the reactive ion etch chamber is changed to adjust the curvature of lens elements formed in the silica substrate and to reduce the aberrations of such lens elements. For example, two gases, CHF.sub.3 and oxygen may be supplied to the reactive ion etch chamber and, during the reactive ion etch process, the proportion of oxygen is significantly reduced, which reduces the aberrations of the lens elements formed by the process.