The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 1994
Filed:
Aug. 08, 1991
Dong-joo Bae, Seoul, KR;
Sung-nam Chang, Kyunggi, KR;
Samsung Electronicw Co., Ltd., Kyunggi-do, KR;
Abstract
An interconnection structure of a semiconductor device for electrically connecting a thin conductive layer and a metallization and the fabrication method thereof are disclosed. The interconnection structure includes a semiconductor substrate, an insulating layer coated on the substrate, a thick conductive layer formed on a certain portion of the insulating layer, a first interlaid insulating layer covering the thick conductive layer, a first contact hole formed within the first interlaid insulating layer on the thick conductive layer, a thin conductive layer consisting of vertical structure formed in the first contact hole and horizontal structure formed on the first interlaid insulating layer, a second interlaid insulating layer covering the thin conductive layer, a second contact hole formed within said first and second interlaid insulating layers and crossing the first contact hole, and a metallization filling the second contact hole and formed on the second interlaid insulating layer. Thus, the contact area between the metallization and thin conductive layer is increased, thereby allowing a reliable ohmic contact while directly connecting the thin conductive layer and metallization.