The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 1994
Filed:
Jul. 29, 1992
Mutsuhiro Mori, Hitachi, JP;
Tomoyuki Tanaka, Hitachi, JP;
Yasumichi Yasuda, Hitachi, JP;
Yasunori Nakano, Hitachi, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
The present invention relates to a semiconductor device having an n-type semiconductor region forming one of the main surfaces of a semiconductor substrate, with a plurality of p-type semiconductor regions formed in the n-type semiconductor region. Two exposed n-type semiconductor regions are formed on each of the p-type semiconductor regions, with a main electrode formed on the n-type semiconductor regions and the exposed p-type semiconductor region therebetween. An insulated gate extends from one of the n-type semiconductor regions in one of the p-type semiconductor regions to a closer one of the n-type semiconductor regions in an adjacent p-type semiconductor region. The length of the insulated gate is longer than a distance between adjacent insulated gates.