The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 1994
Filed:
Oct. 05, 1992
Craig S Lage, Austin, TX (US);
Richard D Sivan, Austin, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
In one embodiment, a semiconductor memory cell (10) having a trench (24) and access transistor (54) formed in a well region (20). The trench (24) substantially contains an inverter (60) which is electrically coupled to ground and power signals by buried layers (12, 18) in the substrate (11). The inverter (60) has a toroidal, shared-gate electrode (40) which electrically controls a driver transistor (32) in the wall (26) of the trench (24), and a thin-film load transistor (42) in the central portion of the trench (24). A portion of the toroidal, shared gate electrode extends to an adjacent well region (20') and contacts well region (20') at cell node (13'). A ground signal is provided to load transistor (42) at the bottom surface (28) of the trench (42). A supply signal is provided by a buried layer (18) which is integral with driver transistor (32).