The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 1994
Filed:
Dec. 02, 1992
Kalyankumar Das, Raleigh, NC (US);
Kobe Steel U.S.A., Inc., Research Triangle Park, NC (US);
Abstract
A double heterojunction bipolar transistor includes diamond as the semiconductor material for the collector and emitter, while silicon carbide provides the base. Accordingly, the diamond is readily and reproducibly p-doped, and the silicon carbide may be fabricated by a solid state reaction to form an n-type intrinsic semiconductor. The base is preferably not so thick as to greatly increase transit time, yet sufficiently thick to prevent tunneling. In one embodiment single crystal diamond and single crystal silicon carbide are used in direct contact with each other. In another embodiment of the transistor, polycrystalline diamond is used, and a layer of insulating diamond is positioned between each face of the silicon carbide layer and the diamond layers. A method for fabricating the transistor includes depositing silicon on the diamond and annealing same so as to produce silicon carbide by a solid state reaction. The silicon carbide so produced is intrinsically n-type. Alternately, the silicon carbide may be directly deposited.