The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 08, 1994

Filed:

Oct. 13, 1992
Applicant:
Inventors:

Yoshihiko Isobe, Toyoake, JP;

Makio Iida, Ichinomiya, JP;

Shoji Miura, Anjo, JP;

Keizou Kajiura, Nagoya, JP;

Mikimasa Suzuki, Toyohashi, JP;

Masami Saito, Kariya, JP;

Assignee:

Nippondenso Co., Ltd., Kariya, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437173 ; 437922 ; 437918 ; 148D / ; 148D / ;
Abstract

A semiconductor device has a thin-film resistor trimmed by laser. The semiconductor device comprises a semiconductor substrate having an element region that covers at least part of the surface of the semiconductor substrate, a first insulation film disposed on the surface of the semiconductor substrate, and a second insulation film disposed on the surface of the semiconductor substrate through an opening of the first insulation film. The opening is formed by selectively removing at least part of the first insulation film at a location on the surface of the semiconductor substrate where the element region is not involved. The thin-film resistor is formed on the second insulation film.


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