The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 1994
Filed:
Apr. 30, 1993
Applicant:
Inventors:
Arumugam Satyanarayan, Mesa, AZ (US);
Bonnie A Swanson, St. Louis, MO (US);
Frank M Richie, Scottsdale, AZ (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 23 ; 437126 ; 437127 ; 437130 ;
Abstract
A liquid phase epitaxial (LPE) melt is formed to be oversaturated with gallium arsenide, and to have a first temperature. A surface of a gallium arsenide substrate is converted to a first P-type layer (12). Subsequently, the first P-type layer (12) and the substrate (11) are covered with the LPE melt. A N-type layer (13) is formed on the first P-type layer (12) by reducing the first temperature of the LPE melt to a second temperature. A second P-type layer (14) is formed on the N-type layer (13) by reducing the second temperature of the LPE melt to a third temperature.