The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 1994
Filed:
May. 29, 1992
Mitsuhiro Shikida, Kokubunji, JP;
Kazuo Sato, Tokyo, JP;
Yoshio Kawamura, Kokubunji, JP;
Shinji Tanaka, Ibaraki, JP;
Yasuaki Horiuchi, Yono, JP;
Akira Koide, Ibaraki, JP;
Toshimitsu Miyada, Hachioji, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
Disclosed is a gas valve capable of switching gases to be introduced within a vacuum chamber with high speed thereby enhancing the controllability of the composion of a semiconducting thin film growing on a substrate and shortening the time required for growth of the thin film. The gas valve comprises a bendable film between a pair of parallel plate electrodes whereby operating the film by an electrostatic force and opening and closing a port for releasing gas to a substrate mounted on the wall surface of a gas chamber and a port for exhausting an unnecessary gas to an exhaust passage. The gas valve is mounted in the vicinity of the substrate within the vacuum chamber for supplying a working gas in a minimum amount required for the film growth.