The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 01, 1994

Filed:

Jun. 10, 1992
Applicant:
Inventors:

Koichi Haga, Matsugagoshi, JP;

Masafumi Kumano, Sendai, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437101 ; 437-3 ; 437101 ; 148D / ;
Abstract

A photoconductive material comprises a photocarrier generating zone using a wide-band gap material and a photocarrier moving zone using an amorphous silicon material. A photocarrier generating zone including a silicon atom as a principal atom comprises an amorphous silicon which contains at least one kind of atom selected from a group including oxygen, nitrogen and carbon and also contains an atom which terminates a dangling bond of a silicon. This photoconductive material can be used for various devices because of its wide-band gap and high photosensitivity.


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