The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 01, 1994

Filed:

Mar. 05, 1992
Applicant:
Inventors:

Euisik Yoon, Sunnyvale, CA (US);

Robert W Allison, Jr, San Jose, CA (US);

Ronald P Kovacs, Mountain View, CA (US);

Assignee:

National Semiconductor, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03C / ; H01L / ; G01R / ;
U.S. Cl.
CPC ...
430 30 ; 2504921 ; 2504922 ; 430311 ; 437-7 ; 437-8 ;
Abstract

A method of and apparatus for processing semiconductor wafers which include observing optical characteristics of exposed undeveloped photoresist, without removing the wafers from the stepper is disclosed. The present invention includes the steps of loading a wafer having a layer of photoresist into a photolithography system, exposing the photoresist in accordance with an initial set of control parameters including exposure time, position of the wafer within the photolithography system, and/or focus change. Prior to developing the photoresist, optical characteristics of the exposed photoresist are observed using a phase contrast microscope which detects latent images. Then, according to the observations of the latent image, the initial set of control parameters are adjusted to generate a second set of control parameters.


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