The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 1994
Filed:
Jul. 31, 1992
Applicant:
Inventor:
Jun Kanamori, Tokyo, JP;
Assignee:
Oki Electric Industry Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257758 ; 257767 ; 257915 ;
Abstract
A multilevel metallization structure for a semiconductor device having an antireflective film and a migration resistant film. The antireflective film is formed on a lower metallization and an dielectric inter-level film is formed on the antireflective film. The dielectric inter-level film has an opening hole for exposing the surface of the lower metallization. The migration resistant film is formed on the dielectric inter-level film and the surfaces of side walls of the opening hole. The upper metallization is formed on the migration resistant film and inside the opening hole so as to directly connect to the lower metallization.