The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 1994
Filed:
Jul. 07, 1992
Applicant:
Inventors:
Assignee:
Korea Institute of Science and Technology, Seoul, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437126 ; 437132 ; 437133 ;
Abstract
The technique of the delta-doping by metalorganic chemical vapor deposition (MOCVD) in GaAs epitaxial layer at 700.degree.-750.degree. C. after deposition of GaAs heteroepitaxial buffer layer exceeding 3 .mu.m thickness on silicon substrate.
Quick Actions:
Min, Suk-ki. (1994). Method for delta-doping in gaas epitaxial layer grown on silicon (U.S. Patent No. 5281551). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5281551
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile