The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 1994
Filed:
May. 22, 1992
Applicant:
Inventors:
Sae H Lee, Fullerton, CA (US);
Richard L Davis, Redondo Beach, CA (US);
Assignee:
Northrop Corporation, Los Angeles, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; B44C / ;
U.S. Cl.
CPC ...
156657 ; 1566591 ; 156663 ;
Abstract
A method is described for producing stacked optical waveguides in a silicon dioxide substrate and includes the steps of: etching a first trench in the substrate; filling the first trench with a glassy optical transmission media; depositing a layer of silicon dioxide over the filled trench; etching a second trench in the silicon dioxide layer, the second trench aligned with the first trench; and filling the second trench with a glassy optical transmission media.
Quick Actions:
Lee, Sae. (1994). Method for the production of optical waveguides employing trench and (U.S. Patent No. 5281305). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5281305
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile