The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 1994
Filed:
Jan. 14, 1993
Zvonimir Gabric, Zorneding, DE;
Alexander Gschwandtner, Munich, DE;
Oswald Spindler, Vaterstetten, DE;
Siemens Aktiengesellschaft, Munich, DE;
Abstract
For cleaning parasitic layers of silicon oxides or nitrides in a reaction chamber, an etching gas mixture is employed in which at least one fluoridated carbon, particularly CF.sub.4 and/or C.sub.2 F.sub.6, is the main constituent. Then, an ozone/oxygen mixture (O.sub.3 /O.sub.2) having optimally high ozone concentration is added to the reaction chamber. The etching gas mixture is excited in the reaction chamber by triggering the etching gas mixture to form a plasma, having extremely low power with an excitation frequency in the RF range. The etching gas mixture etches all surfaces in the reaction chambers free of residues with a high etching rate.